A2C50S65M2 datasheet(10/16 Pages) STMICROELECTRONICS

Part #	A2C50S65M2

Description	ACEPACKTM 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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10 / 16 page

Figure 13. Diode reverse recovery energy vs gate

resistance

IGBT161020171430SLG

1.5

1.2

0.9

0.6

0.3

Erec

(mJ)

RG (Ω)

VCE = 300 V, IF = 50 A, VGE = ±15 V

TJ = 150 °C

TJ = 25 °C

Figure 14. Converter diode forward characteristics

(terminal)

IGBT161020171431DVF

0.4

0.8

1.2

(A)

VF (V)

TJ = 150 °C

TJ = 25 °C

Figure 15. IGBT thermal impedance

IGBT161020171434ZTH

10 0

10 -1

10 -3

10 -2

10 -1

10 0

Zth

(°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

ri (˚C/W) 0.0781

0.2997

0.2348

0.1033

τi(s)

0.0002

0.0065

0.0344

0.2723

ri (˚C/W) 0.0832

0.3154

0.6593

0.3770

τi(s)

0.0003

0.0104

0.0701

0.3228

RC - Foster thermal network

Figure 16. Inverter diode thermal impedance

IGBT161020171435ZTHMT

10 0

10 -1

10 -3

10 -2

10 -1

10 0

Zth

(°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

ri (˚C/W)

0.1741

0.4993

0.2989

0.1226

τi(s)

0.0008

0.0076

0.0405

0.2723

ri (˚C/W)

0.2109

0.5538

0.7885

0.3415

τi(s)

0.0010

0.0126

0.0785

0.3410

RC - Foster thermal network

A2C50S65M2

Electrical characteristics (curves)

DS12340 - Rev 3

page 10/16

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