U632H64
7
March 31, 2006
STK Control #ML0047
Rev 1.0
Nonvolatile Memory Operations
Mode Selection
E
W
HSB
A12 - A0
(hex)
Mode
I/O
Power
Notes
H
X
H
X
Not Selected
Output High Z
Standby
L
H
H
X
Read SRAM
Output Data
Active
l
L
L
H
X
Write SRAM
Input Data
Active
LH
H
0000
1555
0AAA
1FFF
10F0
0F0F
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile STORE
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active
k, l
k, l
k, l
k, l
k, l
k
LH
H
0000
1555
0AAA
1FFF
10F0
0F0E
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
RECALL
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active
k, l
k, l
k, l
k, l
k, l
k
X
X
L
X
STORE/Inhibit
Output High Z
ICC2/Standby
m
k: The six consecutive addresses must be in order listed (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a Store cycle or (0000, 1555, 0AAA, 1FFF,
10F0, 0F0E) for a RECALL cycle. W must be high during all six consecutive cycles. See STORE cycle and RECALL cycle tables and dia-
grams for further details.
The following six-address sequence is used for testing purposes and should not be used: 0000, 1555, 0AAA, 1FFF, 10F0, 139C.
l:
I/O state assumes that G
≤ VIL. Activation of nonvolatile cycles does not depend on the state of G.
m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STORE operation. After the STORE (if any)
completes, the part will go into standby mode inhibiting all operation until HSB rises.
No.
PowerStore Power Up RECALL/
Hardware Controlled STORE
Symbol
Conditions
Min.
Max.
Unit
Alt.
IEC
24 Power Up RECALL Durationn, e
tRESTORE
650
μs
25 STORE Cycle Duration
tHLQX
td(H)S VCC > 4.5 V
10
ms
26 HSB Low to Inhibit One
tHLQZ
tdis(H)S
1
μs
27 HSB High to Inhibit Offe
tHHQX
ten(H)S
700
ns
28 External STORE Pulse Widthe
tHLHX
tw(H)S
250
ns
HSB Output Low Currente, o
IHSBOL
HSB = VOL
3mA
HSB Output High Currente, o
IHSBOH
HSB = VIL
560
μA
Low Voltage Trigger Level
VSWITCH
4.0
4.5
V
n:
tRESTORE starts from the time VCC rises above VSWITCH.
o:
HSB is an I/O that has a week internal pullup; it is basically an open drain output. It is meant to allow up to 32 U632H64 to be ganged
together for simultaneous storing. Do not use HSB to pullup any external circuitry other than other U632H64 HSB pins.
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