30N06. datasheet(1/9 Pages) VBSEMI

Part #	30N06.

Description	N-Channel 60 V (D-S) MOSFET

PDF	9 Pages

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 , IAS = 51 A (see fig. 12).

c. ISD  51 A, dI/dt  250 A/μs, VDD  VDS, TJ  175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

f. Current limited by the package, (die current = 51 A).

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±

Continuous Drain Currentf

VGS at 10 V

TC = 25 °C

ID

50

A

Continuous Drain Current

TC = 100 °C

36

Pulsed Drain Currenta

IDM

200

Linear Derating Factor

1.0

W/°C

Linear Derating Factor (PCB Mount)e

0.025

Single Pulse Avalanche Energyb

EAS

400

mJ

Maximum Power Dissipation

TC = 25 °C

PD

150

W

Maximum Power Dissipation (PCB Mount)e

TA = 25 °C

3.7

Peak Diode Recovery dV/dtc

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)d

for 10 s

300d

N-Channel 60 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a, e

Qg (Max)

60

0.024 at VGS = 10 V

50

66 nC

0.028 at VGS = 4.5 V

40

TO-220AB

Top View

GD S

20

www.VBsemi.com

m

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