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30N06L. Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # 30N06L.
Description  N-Channel 60 V (D-S) MOSFET
PDF  7 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

30N06L. Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 60 V (D-S) MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
•
TrenchFET® Power MOSFET
•
100 % Rg and UIS Tested
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Power Supply
- Secondary Synchronous Rectification
•
DC/DC Converter
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
Qg (Typ.)
60
0.0
3 at V
GS = 10 V
5d
21.7
0.0
at VGS = 4.5 V
0d
Notes:
a. Duty cycle
≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
d
A
TC = 70 °C
d
Pulsed Drain Current
IDM
100
Avalanche Current
IAS
40
Single Avalanche Energya
L = 0.1 mH
EAS
80
mJ
Maximum Power Dissipationa
TC = 25 °C
PD
59.5b
W
TA = 25 °C
c
2.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)c
RthJA
46
°C/W
Junction-to-Case (Drain)
RthJC
2.1
D
G
S
N-Channel MOSFET
3
3
3
3
5
30
TO-251
S
D
G
Top View
2
7
www.VBsemi.com
m
m
m
m
m
m
服务热线：400-655-8788
30N06L.
1


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