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IRLML2244 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # IRLML2244
Description  -20V P-Channel Enhancement Mode MOSFET
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

IRLML2244 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃, unless otherwise noted)
2/5
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.014
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V , ID=-4.9A
---
32
38
mΩ
VGS=-2.5V , ID=-3.4A
---
45
55
VGS=-1.8V , ID=-2A
---
65
85
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.4
---
-1.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.95
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
12.8
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-3A
---
10.2
14.3
nC
Qgs
Gate-Source Charge
---
1.89
2.6
Qgd
Gate-Drain Charge
---
3.1
4.3
Td(on)
Turn-On Delay Time
VDD=-10V , VGS=-4.5V ,
RG=3.3 , ID=-3A
---
5.6
11.2
ns
Tr
Rise Time
---
40.8
73
Td(off)
Turn-Off Delay Time
---
33.6
67
Tf
Fall Time
---
18
36
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
857
1200
pF
Coss
Output Capacitance
---
114
160
Crss
Reverse Transfer Capacitance
---
108
151
IS
Continuous Source Current1,4
VG=VD=0V , Force Current
---
---
-4.9
A
ISM
Pulsed Source Current2,4
---
---
-14
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-3A , di/dt=100A/µs ,
TJ=25℃
---
21.8
---
nS
Qrr
Reverse Recovery Charge
---
6.9
---
nC
Note :
1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width △ 300us , duty cycle △ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
01.0
7.2021
IRLML2244



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