SCT040H65G3SAG datasheet(2/12 Pages) STMICROELECTRONICS

Part #	SCT040H65G3SAG

Description	Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

650

VGS

Gate-source voltage

-10 to 22

Gate-source voltage (recommended operating values)

-5 to 18

Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime

-11 to 25

ID(1)

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM(2)

Drain current (pulsed)

160

PTOT

Total power dissipation at TC = 25 °C

221

Tstg

Storage temperature range

-55 to 175

°C

Operating junction temperature range

°C

1. ID is limited by package.

2. Pulse width is limited by safe operating area.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

0.68

°C/W

RthJA

Thermal resistance, junction-to-ambient

°C/W

SCT040H65G3SAG

Electrical ratings

DS13933 - Rev

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