STB12N60DM2AG datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STB12N60DM2AG

Description	Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

GADG290520201612SOA

10 1

10 0

10 -1

10 0

10 1

10 2

(A)

VDS (V)

tp =1µs

tp =10µs

tp =100µs

tp =1ms

tp =10ms

V(BR)DSS

Single pulse

TJ = 150 °C

TC = 25 °C

RDS(on) max.

IDM

Figure 2. Maximum transient thermal impedance

GADG290520201612ZTH

10-1

10-2

10-3

10-6

10-5

10-4

10-3

10-2

10-1

tp (s)

ZthJ-C

(°C/W)

ton

duty = ton / T

RthJ-C = 1 °C/W

Single pulse

0.05

0.1

0.2

duty=0.5 0.4 0.3

Figure 3. Typical output characteristics

GIPG120420181034OCH

(A)

VDS (V)

VGS = 7 V

VGS =5 V

VGS = 8, 9, 10 V

VGS =6 V

Figure 4. Typical transfer characteristics

GIPG120420181034TCH

4.5

5.0

5.5

6.0

6.5

7.0

7.5

(A)

VGS (V)

VDS = 15 V

Figure 5. Typical gate charge characteristics

GIPG120420181035QVG

400

300

200

100

VDS

VGS

Qg (nC)

VDD = 480 V

VDS

Qgs

Qgd

ID = 10 A

(V)

Figure 6. Typical drain-source on-resistance

GIPG120420181043RID

440

420

400

380

360

340

320

RDS(on)

ID (A)

VGS = 10 V

(mΩ)

STB12N60DM2AG

Electrical characteristics (curves)

DS13374 - Rev 2

page 5/15

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