STB47N60DM6AG datasheet(2/15 Pages) STMICROELECTRONICS

Part #	STB47N60DM6AG

Description	Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmesh™ DM6 Power MOSFET in a D2PAK package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

ID (1)

Drain current (pulsed)

137

PTOT

Total power dissipation at TC = 25 °C

250

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

100

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Pulse width limited by safe operating area

2. ISD ≤ 36 A, di/dt ≤ 800 A/μs, VDS (peak) < V(BR)DSS, VDD = 480 V

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

1. When mounted on FR-4 board of 1 inch², 2oz Cu.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 100 V)

700

STB47N60DM6AG

Electrical ratings

DS12070 - Rev 4

page 2/15

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