STD12N60DM2AG datasheet(2/15 Pages) STMICROELECTRONICS

Part #	STD12N60DM2AG

Description	Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 15 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

6.3

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at Tcase = 25 °C

110

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 10 A, di/dt= 800 A/μs; VDS peak < V(BR)DSS,VDD = 400 V

3. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.14

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

1. When mounted on 1 inch² FR-4 board, 2oz Cu.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR (1)

Avalanche current, repetitive or not repetitive

EAS (2)

Single pulse avalanche energy

250

1. pulse width limited by Tjmax

2. starting Tj = 25 °C, ID = IAR, VDD = 50 V.

STD12N60DM2AG

Electrical ratings

DS12209 - Rev 4

page 2/15

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