STK184N4F7AG datasheet(3/13 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 40 V

µA

IGSS

Gate-body leakage current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 50 A

1.6

2.0

mΩ

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS= 0 V

2750

Coss

Output capacitance

625

Crss

Reverse transfer capacitance

200

Total gate charge

VDD = 20 V, ID = 100 A,

VGS = 0 to 10 V

(see Figure 13. Test circuit for gate

charge behavior)

Qgs

Gate-source charge

Qgd

Gate-drain charge

8.9

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 50 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit for

resistive load switching times and

Figure 17. Switching time

waveform)

Rise time

td(off)

Turn-off delay time

33.4

Fall time

20.7

Table 6. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD(1)

Forward on voltage

ISD = 100 A, VGS = 0 V

1.1

trr

Reverse recovery time

ID = 100 A, di/dt = 100 A/µs

VDD = 20 V

(see Figure 14. Test circuit for

inductive load switching and diode

recovery times)

Qrr

Reverse recovery charge

9.5

IRRM

Reverse recovery current

0.8

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STK184N4F7AG

Electrical characteristics

DS12627 - Rev 2

page 3/13

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