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STL110N4F7AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STL110N4F7AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  October 2017 DocID030194 Rev 3 1/14 This is information on a product in full production. www.st.com STL110N4F7AG Automotive-grade N- channel 40 V, 3.3 mΩ typ., 108 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STL110N4F7AG 40 V 4.0 mΩ 108 A AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STL110N4F7AG 110N4F7 PowerFLATTM 5x6 Tape and reel |
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