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STL19N3LLH6AG Datasheet(PDF) 4 Page - STMicroelectronics |
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STL19N3LLH6AG Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 14 page ![]() Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(2) Forward on voltage VGS = 0 V, ISD = 10 A - 1.12 V trr Reverse recovery time ISD = A, di/dt = 100 A/µs, VDD = 24 V (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 15.1 ns Qrr Reverse recovery charge - 7.5 nC IRRM Reverse recovery current - 1 A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. STL19N3LLH6AG Electrical characteristics DS12507 - Rev 1 page 4/14 |
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