STWA32N65DM6AG datasheet(6/12 Pages) STMICROELECTRONICS

Part #	STWA32N65DM6AG

Description	Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 12 page

Figure 7. Typical capacitance characteristics

GADG210420210934CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

Ciss

Coss

Crss

f = 1 MHz

Figure 8. Normalized gate threshold vs temperature

GADG210420210936VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

TJ (°C)

ID = 250 µA

Figure 9. Normalized on-resistance vs temperature

GADG210420210935RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

TJ (°C)

VDS = 10 V

Figure 10. Typical output capacitance stored energy

GADG220420210840EOS

100 200 300 400 500 600

EOSS

(µJ)

VDS (V)

Figure 11. Normalized breakdown voltage vs temperature

GADG210420210937BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

TJ (°C)

ID = 1 mA

Figure 12. Typical reverse diode forward characteristics

GADG210420210938SDF

1.2

1.0

0.8

0.6

0.4

VSD

(V)

ISD (A)

TJ = -50 °C

TJ = 25 °C

TJ = 150 °C

STWA32N65DM6AG

Electrical characteristics

(curves)

DS13715 - Rev 2

page 6/12

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