STWA46N65DM6AG datasheet(6/12 Pages) STMICROELECTRONICS

Part #	STWA46N65DM6AG

Description	Automotive-grade N-channel 650 V, 55 mΩ typ., 50 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

6 / 12 page

Figure 7. Typical drain-source on-resistance

GADG080420211009RID

RDS(on)

(mΩ)

ID (A)

VGS = 10 V

Figure 8. Normalized on-resistance vs temperature

GADG080420211010RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

TJ (°C)

VDS = 10 V

IDS = 25 A

Figure 9. Normalized gate threshold vs temperature

GADG080420211010VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

TJ (°C)

ID = 250 µA

Figure 10. Normalized breakdown voltage vs temperature

GADG080420211011BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

TJ (°C)

ID = 1 mA

Figure 11. Typical reverse diode forward characteristics

GADG080420211014SDF

1.4

1.2

1.0

0.8

0.6

0.4

VSD

(V)

ISD (A)

TJ = 150 °C

TJ = 25 °C

TJ = -50 °C

Figure 12. Typical output capacitance stored energy

GADG080420211015EOS

100 200 300 400 500 600

EOSS

(µJ)

VDS (V)

STWA46N65DM6AG

Electrical characteristics

(curves)

DS13705 - Rev 2

page 6/12

STWA46N65DM6AG Datasheet(PDF) 6 Page - STMicroelectronics

STWA46N65DM6AG Datasheet(HTML) 6 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL