STWA68N65DM6AG datasheet(6/12 Pages) STMICROELECTRONICS

Part #	STWA68N65DM6AG

Description	Automotive-grade N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 12 page

Figure 7. Typical capacitance characteristics

GADG200720201040CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

Ciss

f = 1 MHz

Coss

Crss

Figure 8. Typical output capacitance stored energy

GADG200720201040EOS

100 200 300 400 500 600

VDS (V)

EOSS

(μJ)

Figure 9. Normalized gate threshold vs temperature

GADG200720201159VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

TJ (°C)

ID = 250 μA

Figure 10. Normalized on-resistance vs temperature

GADG200720201200RON

2.0

1.5

1.0

0.5

-75

-25

125

RDS(on)

(norm.)

VGS = 10 V

TJ (°C)

Figure 11. Normalized breakdown voltage vs temperature

GADG200720201112BDV

1.10

1.05

1.00

0.95

0.90

-75

-25

125

V(BR)DSS

(norm.)

ID = 1 mA

TJ (°C)

Figure 12. Typical reverse diode forward characteristics

GADG200720201042SDF

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

Tj = -50 °C

Tj = 25 °C

Tj = 150 °C

STWA68N65DM6AG

Electrical characteristics (curves)

DS13422 - Rev 1

page 6/12

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