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STP33N60M6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP33N60M6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() 1 2 3 TO-220 TAB D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. ID STP33N60M6 600 V 125 mΩ 25 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STP33N60M6 Product summary Order code STP33N60M6 Marking 33N60M6 Package TO-220 Packing Tube N-channel 600 V, 105 mΩ typ., 25 A, MDmesh™ M6 Power MOSFET in a TO-220 package STP33N60M6 Datasheet DS12640 - Rev 2 - July 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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