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STP65N150M9 Datasheet(PDF) 6 Page - STMicroelectronics |
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STP65N150M9 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() Figure 7. Typical drain-source on-resistance GADG110720221536RID 139.5 137.0 134.5 132.0 129.5 127.0 124.5 122.0 0 5 10 15 20 RDS(on) (mΩ) ID (A) VGS = 10 V Figure 8. Normalized on-resistance vs temperature GADG110720221537RON 2.5 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 RDS(on) (norm.) TJ (°C) VGS = 10 V Figure 9. Normalized gate threshold vs temperature GADG110720221538VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) TJ (°C) ID = 250 µA Figure 10. Normalized breakdown voltage vs temperature GADG110720221538BDV 1.10 1.05 1.00 0.95 0.90 0.85 -75 -25 25 75 125 V(BR)DSS (norm.) TJ (°C) ID = 1 mA Figure 11. Typical reverse diode forward characteristics GADG110720221540SDF 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 5 10 15 20 VSD (V) ISD (A) TJ = -55 °C TJ = 25 °C TJ = 150 °C Figure 12. Typical output capacitance stored energy GADG240320221821EOS 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) STP65N150M9 Electrical characteristics (curves) DS13496 - Rev 1 page 6/12 |
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