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STU3N65M6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STU3N65M6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() 3 2 1 TAB IPAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on)max. ID STU3N65M6 650 V 1.5 Ω 3.5 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status STU3N65M6 Product summary Order code STU3N65M6 Marking 3N65M6 Package IPAK Packing Tube N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh™ M6 Power MOSFET in an IPAK package STU3N65M6 Datasheet DS11590 - Rev 2 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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