STU5N65M6 datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STU5N65M6

Description	N-channel 650 V, 1.15 typ., 4 A MDmesh™ M6 Power MOSFET in an IPAK package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

STU5N65M6

Electrical characteristics

DocID029218 Rev 2

5/12

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD(2)

Forward on voltage

ISD = 4 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 4 A, di/dt = 100 A/µs,

VDD = 60 V, (see Figure 19:

"Switching time waveform")

222

Qrr

Reverse recovery charge

1.24

µC

IRRM

Reverse recovery current

11.2

trr

Reverse recovery time

ISD = 4 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 19: "Switching

time waveform")

264

Qrr

Reverse recovery charge

1.39

µC

IRRM

Reverse recovery current

10.5

Notes:

(1)Pulse width limited by safe operating area

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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