STWA75N60M6 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STWA75N60M6

Description	N-channel 600 V, 32 m typ., 72 A, MDmesh™ M6 Power MOSFET in a TO‑247 long leads package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

288

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 72 A

1.6

trr

Reverse recovery time

ISD = 72 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 15. Test

circuit for inductive load switching

and diode recovery times)

367

Qrr

Reverse recovery charge

6.4

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 72 A, di/dt = 100 A/µs,

VDD = 60 V, TJ = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

552

Qrr

Reverse recovery charge

13.7

µC

IRRM

Reverse recovery current

49.6

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STWA75N60M6

Electrical characteristics

DS12418 - Rev 2

page 4/13

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