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STF33N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF33N60DM6
Description  N-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF33N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG250220191140SOA
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =1 µs
tp =100 µs
tp =1 ms
tp =10 µs
tp =10 ms
single pulse
TJ≤150 °C
TC=25 °C
VGS=10 V
Operation in this area
is limited by R DS(on)
Figure 2. Normalized thermal impedance
10-1
10-2
10-3
K
t
p(s)
10-4
10-3
10-2
10-1
10-0
Zth= K*RthJ-c
δ =t p/Ƭ
tp
Ƭ
δ=0.5
0.01
Single pulse
0.2
0.1
0.02
0.05
GC20521
Figure 3. Output characteristics
GADG191220180852OCH
70
60
50
40
30
20
10
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS = 6 V
VGS = 7 V
VGS = 8 V
VGS = 9 V
VGS = 10 V
Figure 4. Transfer characteristics
GADG191220180853TCH
70
60
50
40
30
20
10
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Gate charge vs gate-source voltage
GADG191220180853QVG
12
10
8
6
4
2
0
600
500
400
300
200
100
0
0
5
10
15
20
25
30
35
Qg (nC)
VDS
Qg
Qgd
Qgs
VDD = 480 V, ID = 25 A
VDS
(V)
VGS
(V)
Figure 6. Capacitance variations
GADG191220180854CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
STF33N60DM6
Electrical characteristics (curves)
DS12937 - Rev 2
page 5/12



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