STF46N60M6 datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STF46N60M6

Description	N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220FP package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 12 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD (1)

Source-drain current

ISDM (2)

Source-drain current (pulsed)

126

VSD (3)

Forward on voltage

ISD = 36 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 36 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

267

Qrr

Reverse recovery charge

2.8

µC

IRRM

Reverse recovery current

20.8

trr

Reverse recovery time

ISD = 36 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

440

Qrr

Reverse recovery charge

5.8

µC

IRRM

Reverse recovery current

26.4

1. Limited by maximum junction temperature.

2. Pulse width is limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STF46N60M6

Electrical characteristics

DS13019 - Rev 2

page 4/12

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