STL10N65M2 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STL10N65M2

Description	N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

GADG160320171047SOA

10 1

10 0

10 -1

10 0

10 1

10 2

(A)

VDS (V)

Operation in this area is

limited by R DS(on)

tp =10 µs

tp =100 µs

tp =1 ms

tp =10 ms

Single pulse,TC = 25 °C,

TJ ≤ 150 °C, VGS = 10 V

Figure 2. Thermal impedance

Single pulse

0.05

0.02

0.01

d=0.5

0.1

0.2

tp(s)

10-5 10-4 10-3

10-2

10-1

-6

10-3

10-2

ZthPowerFlat_5x6_19

10-1 100

Figure 3. Output characteristics

GADG160320171044OCH

(A)

VDS (V)

VGS = 5 V

VGS = 6 V

VGS = 7 V

VGS = 8, 9, 10 V

Figure 4. Transfer characteristics

GADG160320171044TCH

(A)

VGS (V)

VDS = 20 V

Figure 5. Gate charge vs gate-source voltage

GADG160320171046QVG

600

500

400

300

200

100

VGS

(V)

VDS

(V)

Qg (nC)

VDS

VDD = 520 V,

ID = 5 A

Figure 6. Static drain-source on-resistance

GADG160320171045RID

0.91

0.89

0.87

0.85

0.83

0.81

RDS(on)

(Ω)

ID (A)

VGS = 10 V

STL10N65M2

Electrical characteristics (curves)

DS12063 - Rev 2

page 5/15

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