STL12N60M6 datasheet(2/15 Pages) STMICROELECTRONICS

Part #	STL12N60M6

Description	N-channel 600 V, 390 m typ., 6.4 A MDmesh™ M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

6.4

Drain current (continuous) at Tcase = 100 °C

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at Tcase = 25 °C

IAR (2)

Avalanche current, repetitive or not repetitive

1.8

EAS (3)

Single pulse avalanche energy

130

dv/dt(4)

Peak diode recovery voltage slope

V/ns

dv/dt(5)

MOSFET dv/dt ruggedness

100

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. Pulse width limited by Tjmax.

3. starting Tj = 25 °C, ID = IAR, VDD = 50 V.

4. ISD ≤ 6.4 A, di/dt = 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.

5. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.6

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

1. When mounted on a 1-inch² FR-4, 2 Oz copper board.

STL12N60M6

Electrical ratings

DS12869 - Rev 1

page 2/15

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