STL19N60M6 datasheet(2/14 Pages) STMICROELECTRONICS

Part #	STL19N60M6

Description	N-channel 600 V, 255 m typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 14 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

6.9

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

dv/dt (2)

Peak diode recovery voltage slope

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

100

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS (peak) < V(BR)DSS, VDD = 400 V.

3. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.39

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

°C/W

1. When mounted on FR-4 board of inch², 2oz Cu.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by TJ max)

2.7

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR; VDD = 50 V)

210

STL19N60M6

Electrical ratings

DS13180 - Rev 1

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