STL22N60M6 datasheet(2/15 Pages) STMICROELECTRONICS

Part #	STL22N60M6

Description	N-channel 600 V, 220 m typ., 10 A, MDmesh™ M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 15 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM(1)

Drain current (pulsed)

PTOT

Total power dissipation at Tcase = 25 °C

dv/dt(2).

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

100

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 10 A, di/dt = 400 A/μs, VDS < V(BR)DSS, VDD = 400 V

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.2

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

°C/W

1. When mounted on 1 inch2 FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or non-repetitive

(pulse width limited by TJmax)

2.9

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

230

STL22N60M6

Electrical ratings

DS12833 - Rev 1

page 2/15

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