ZXMS6005N8

Document number: DS38473 Rev. 3 - 2

2 of 8

www.diodes.com

June 2017

© Diodes Incorporated

ZXMS6005N8

qDMN2027US

S

Functional Block Diagram

Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)

Characteristic

Symbol

Value

Unit

Continuous Drain-Source Voltage

VDS

60

V

Drain-Source Voltage for Short Circuit Protection

VDS(SC)

24

V

Continuous Input Voltage

VIN

-0.5 to +6

V

Continuous Input Current @-

0.2V ≤ VIN ≤ 6V

Continuous Input Current @VIN < -0.2V or VIN > 6V

IIN

No Limit

│IIN│≤ 2

mA

Pulsed Drain Current @VIN = 3.3V

IDM

5

A

Pulsed Drain Current @VIN = 5V

IDM

6

A

Continuous Source Current (Body Diode) (Note 5)

IS

2.5

A

Pulsed Source Current (Body Diode)

ISM

10

A

Unclamped Single Pulse Inductive Energy,

TJ = +25°C, ID = 0.5A, VDD = 24V

EAS

120

mJ

Electrostatic Discharge (Human Body Model)

VHBM

4,000

V

Charged Device Model

VCDM

1,000

V

Recommended Operating Conditions

The ZXMS6005N8 is optimized to use with

μC operating from 3.3V and 5V supplies.

Characteristic

Symbol

Min

Max

Unit

Input Voltage Range

VIN

0

5.5

V

Ambient Temperature Range

TA

-40

+125

°C

High Level Input Voltage for MOSFET to be On

VIH

3

5.5

V

Low Level Input Voltage for MOSFET to be Off

VIL

0

0.7

V

Peripheral Supply Voltage (Voltage to which Load is Referred)

VP

0

24

V