2SA2183

2006-11-16

1

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2183

High Current Switching Applications

• Low collector-emitter saturation : VCE(sat) = −1.0 V（max）

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

−60

V

Collector-emitter voltage

VCEO

−60

V

Emitter-base voltage

VEBO

−7

V

DC

IC

−5.0

A

Collector current

Pulse

ICP

−8.0

A

Base current

IB

−0.5

A

Ta = 25°C

2

W

Collector power

dissipation

Tc = 25°C

PC

20

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10U1A

Weight: 1.7 g (typ.)

1 : Base

2 : Collector

3 : Emitter