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US2D Datasheet(PDF) 1 Page - DAESAN ELECTRONIC CORP. |
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US2D Datasheet(HTML) 1 Page - DAESAN ELECTRONIC CORP. |
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1 / 2 page ![]() US2A THRU US2M Features · Low profile package · Ideal for automated placement · Glass passivated chip junctions · Ultrafast reverse recovery time · Low switching losses, high efficiency · High forward surge capability · High temperature soldering: 260℃/10 seconds at terminals Maximum Ratings And Electrical characteristics ( unless otherwise noted) Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum average forward rectified current V Symbols Units ℃ A Items Mechanical Data · Case : DO-214AC(SMA) molded plastic body over glass passivated chip · Polarity : Laser band denotes cathode end · Terminals : Solder plated, solderable per JESD22-B102D VRRM μA Dimensions in inches and (millimeters) ULTRAFAST RECOVERY RECTIFIER CURRENT 2.0 A VOLTAGE 50 to 1000 V I(AV) Operating junction and storage temperature range Maximum DC blocking voltage US2A V A pF Thermal resistance from junction to lead VF IR TRR VRMS ns NOTE : (1) Reverse recovery test conditions : IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. (3) Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas. 50 35 50 US2B US2D US2G US2J US2K US2M 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 V Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) TJ, TSTG 50 ℃/W VDC IFSM TA=25℃ TA=125℃ -55 to + 150 RθJL 2.0 1.3 1.0 1.7 V 5.0 50 50 75 15 35 CJ Typical junction capacitance Maximum reverse recovery time(1) (2) (3) Maximum instantaneous forward voltage at 2.0A Reverse currnet VR=VDC TA=25℃ DO-214AC (SMA) 0.006(0.152) 0.012(0.305) 0.194(4.93) 0.222(5.65) 0.078(1.98) 0.960(2.42) 0.157(3.99) 0.177(4.50) 0.100(2.54) 0.110(2.80) 0.008(0.203) MAX. 0.049(1.25) 0.067(1.70) 0.030(0.76) 0.060(1.52) https://dec.co.kr DAESAN ELECTRONIC CORP. |
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