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TCET111. Datasheet(PDF) 3 Page - Vishay Siliconix

Part # TCET111.
Description  Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated
PDF  8 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TCET111. Datasheet(HTML) 3 Page - Vishay Siliconix

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TCET111., TCET111.G
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 17-Dec-2020
3
Document Number: 83546
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
• According to DIN EN 60747-5-5 (see Fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
-1.25
1.6
V
Junction capacitance
VR = 0, f = 1 MHz
Cj
-50
-
pF
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
70
-
-
V
Emitter collector voltage
IE = 100 μA
VECO
7-
-
V
Collector emitter cut-off current
VCE = 20 V, IF = 0 A
ICEO
-
10
100
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
--
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 
fc
-
110
-
kHz
Coupling capacitance
f = 1 MHz
Ck
-0.6
-
pF
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IC/IF
VCE = 5 V, IF = 1 mA
TCET1112G
CTR
22
45
-
%
TCET1113,
TCET1113G
CTR
34
70
-
%
TCET1114G
CTR
56
90
-
%
VCE = 5 V, IF = 5 mA
TCET1110G
CTR
50
-
600
%
VCE = 5 V, IF = 10 mA
TCET1112G
CTR
63
-
125
%
TCET1113,
TCET1113G
CTR
100
-
200
%
TCET1114G
CTR
160
-
320
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
8kV
Vpd
1.36
kV
Insulation resistance
VIO = 500 V
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Forward current
Isi
130
mA
Power dissipation
Pso
265
mW
Rated impulse voltage
VIOTM
6kV
Safety temperature
Tsi
150
°C



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