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DMN10H220LFDF Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN10H220LFDF
Description  100V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN10H220LFDF Datasheet(HTML) 3 Page - Diodes Incorporated

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DMN10H220LFDF
Datasheet number: DS42084 Rev. 2 - 2
3 of 7
www.diodes.com
February 2020
© Diodes Incorporated
DMN10H220LFDF
0.0
2.0
4.0
6.0
8.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 3.5V
V
GS = 4.0V
V
GS = 4.5V
V
GS = 10.0V
V
GS = 8.0V
V
GS = 6.0V
0
2
4
6
8
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 10V
TJ = -55℃
TJ = 25℃
TJ = 85℃
TJ = 125℃
TJ = 150℃
0.05
0.1
0.15
0.2
0.25
0.3
1
2
3
4
5
6
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 10V
V
GS = 4.5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
2
4
6
8
10
12
14
16
18
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 6.0A
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
1
2
3
4
5
6
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
TJ = -55℃
TJ = 25℃
TJ = 85℃
TJ = 150℃
TJ = 125℃
V
GS = 10V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
V
GS = 4.5V, ID = 1A
V
GS = 10V, ID = 2A



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