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DMN10H220LFDF-13 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN10H220LFDF-13
Description  100V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN10H220LFDF-13 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN10H220LFDF
Datasheet number: DS42084 Rev. 2 - 2
4 of 7
www.diodes.com
February 2020
© Diodes Incorporated
DMN10H220LFDF
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 10V, ID = 2A
V
GS = 4.5V, ID = 1A
0
2
4
6
8
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125
oC
T
J = 85
oC
T
J = 25
oC
T
J = -55
oC
V
GS = 0V
T
J = 150
oC
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA
1
10
100
1000
10000
0
20
40
60
80
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
10
0
2
4
6
8
Q
g (nC)
Figure 11. Gate Charge
V
DS = 50V, ID = 1.6A
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max) = 150℃
T
C = 25℃
Single Pulse
DUT on 1*MRP
board
V
GS = 10V
R
DS(ON) Limited
P
W = 100ms
P
W = 10ms
P
W = 1ms
P
W = 100µs
P
W = 1s
P
W = 10s
DC



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