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TPCF8101 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TPCF8101
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
PDF  6 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8101 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPCF8101
2002-08-28
3
Drain-source voltage VDS (V)
ID – VDS
Drain-source voltage VDS (V)
ID – VDS
Gate-source voltage VGS (V)
ID – VGS
Gate-source voltage VGS (V)
VDS – VGS
Drain current ID (A)
Drain current ID (A)
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1
-2
-3
-4
-5
VGS = -1.4 V
-1.5
-1.6
-1.7
-1.8
-1.9
-2
-3
-4.5
Common source
Ta
= 25°C Pulse test
-4
-5
-2.5
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
-2
-4
-6
-8
-10
Ta
= -55°C
Ta
= 100°C
Ta
= 25°C
Common source
VDS = -10 V
Pulse test
0
0
-2
-4
-6
-10
-0.1
-0.2
-0.3
-0.4
-0.5
-8
Common source
Ta
= 25°C
Pulse test
ID = -6 A
-3 A
-1.5 A
|Yfs| – ID
RDS (ON) – ID
1
-0.1
-1
-10
-100
10
100
1000
Common source
Ta
= 25°C
Pulse test
VGS = -4.5 V
-2.5 V
-1.8 V
0.1
-0.1
-1
-10
-100
1
10
100
Common source
VDS = -10 V
Pulse test
Ta
= 100°C
Ta
= -55°C
Ta
= 25°C
0
0
-1
-2
-3
-4
-5
-2
-4
-6
-8
-10
VGS = -1.4 V
-1.5
-1.6
-1.7
-1.8
-1.9
-2
-2.5
-3
-4
-5
Common source
Ta
= 25°C Pulse test



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