Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

Apr.28 2005 ver1.1

1

P R ODUC T

30V

7A

S O-8

1

1

2

3

4

8

7

6

5

(N-C hannel)

P R ODUC T S UMMAR Y

-30V

-4.5A

(P -C hannel)

S amHop Microelectronics C orp.

S T M8301

Parameter

S ymbol

N-Channel P-Channel

Unit

Drain-S ource Voltage

V

Gate-S ource Voltage

V

Drain Current-Continuous @ Ta

-Pulsed

2

A

A

A

W

Drain-S ource Diode Forward Current

Maximum Power Dissipation

Operating Junction and S torage

Temperature R ange

-55 to 150

C

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Ambient

62.5

/W

C

a

a

a

a

b

30

1.7

-30

-4.5

-1.7

20

20

-18

7

29

25 C

70 C

Ta= 25 C

Ta=70 C

1.44

6

-3.8

A