BF1009SW

2

Jun-28-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Drain-source breakdown voltage

ID = 300 µA, VG1S = 0 V, VG2S = 0 V

V

-

V(BR)DS

-

16

Gate 1 - source breakdown voltage

+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V

-

12

+V(BR)G1SS

8

Gate 2 source breakdown voltage

±IG2S = 10 mA, VG1S = 0 V, VDS = 0 V

-

16

10

±V(BR)G2SS

Gate 1 source current

VG1S = 6 V, VG2S = 0 V

-

-

µA

60

+IG1SS

Gate 2 source leakage current

±VG2S = 8 V, VG1S = 0 V, VDS = 0 V

±IG2SS

-

-

nA

50

IDSS

-

500

µA

-

Drain current

VDS = 9 V, VG1S = 0 , VG2S = 6 V

IDSO

10

14

Operating current (selfbiased)

VDS = 9 V, VG2S = 6 V

mA

19

VG2S(p)

-

0.9

-

V

Gate 2-source pinch-off voltage

VDS = 9 V, ID = 100 µA

AC characteristics

Forward transconductance (self biased)

VDS = 9 V, VG2S = 6 V

gfs

26

30

-

mS

Gate 1-input capacitance (self biased)

VDS = 9 V, VG2S = 6 V, f = 1 MHz

Cg1ss

-

2.1

2.7

pF

Output capacitance (self biased)

VDS = 9 V, VG2S = 6 V, f = 1 MHz

Cdss

-

0.9

-

Power gain (self biased)

VDS = 9 V, VG2S = 6 V, f = 800 MHz

Gps

18

22

-

dB

Noise figure (self biased)

VDS = 9 V, VG2S = 6 V, f = 800 MHz

F800

-

1.4

-

Gain control range (self biased)

VDS = 9 V, VG2S = 6 ... 0V, f = 800 MHz

Gps

40

50

-