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STWA57N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STWA57N65M5
Description  N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs in TO-247 and TO-247 long leads packages
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STWA57N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

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STW57N65M5, STWA57N65M5
Electrical characteristics
16
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
t
d(V)
Voltage delay time
V
DD
= 400 V, I
D
= 28 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see
Figure 17 and 20)
-73
-
ns
t
r(V)
Voltage rise time
-
15
-
ns
t
f(i)
Current fall time
-
12
-
ns
t
c(off)
Crossing time
-
19
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
I
SD
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
42
168
A
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 42 A, V
GS
= 0
-
1.5
V
t
rr
Reverse recovery time
I
SD
= 42 A, di/dt = 100 A/μs
V
DD
= 100 V (see
Figure 17)
-418
ns
Q
rr
Reverse recovery charge
-
8
μC
I
RRM
Reverse recovery current
-
40
A
t
rr
Reverse recovery time
I
SD
= 42 A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 150 °C
(see
Figure 17)
-528
ns
Q
rr
Reverse recovery charge
-
12
μC
I
RRM
Reverse recovery current
-
44
A



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