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TC58FVM7B2AFT65 Datasheet(PDF) 21 Page - Toshiba Semiconductor

Part # TC58FVM7B2AFT65
Description  128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY
PDF  69 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC58FVM7B2AFT65 Datasheet(HTML) 21 Page - Toshiba Semiconductor

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TC58FVM7 (T/B) 2AFT (65/80)
2004-09-01
21/69
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RANGE
UNIT
VDD
VDD Supply Voltage
−0.6~4.6
V
VIN
Input Voltage
−0.6~VDD + 0.5 (≤ 4.6)
(1)
V
VDQ
Input/Output Voltage
−0.6~VDD + 0.5 (≤ 4.6)
(1)
V
VIDH
Maximum Input Voltage for A9, OE and RESET
(2)
13.0
V
VACCH
Maximum Input Voltage for
/ACC
WP
(2)
10.5
V
PD
Power Dissipation
600
mW
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
−55~150
°C
Topr
Operating Temperature
−40~85
°C
IOSHORT
Output Short-Circuit Current
(3)
100
mA
(1)
This level may undershoot to
−2.0 V for periods < 20 ns, and may overshoot to +2.0 V for periods < 20 ns.
(2)
Do not apply VID/VACC when the supply voltage is not within the recommended operating voltage range of the device.
(3)
Outputs should be shorted for no more than one second.
No more than one output should be shorted at a time.
CAPACITANCE (Ta
= 25°C, f = 1 MHz)
SYMBOL
PARAMETER
CONDITION
MAX
UNIT
CIN
Input Pin Capacitance
VIN = 0 V
5
pF
COUT
Output Pin Capacitance
VOUT = 0 V
8
pF
CIN2
Control Pin Capacitance
VIN = 0 V
7
pF
This parameter is periodically sampled and is not tested for every device.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
MAX
UNIT
VDD
VDD Supply Voltage
2.3
3.6
VIH
Input High-Level Voltage
0.7
× VDD
VDD + 0.3
VIL
Input Low-Level Voltage
−0.3
0.2
× VDD
VID
High-Level Voltage for A9, OE and RESET
11.4
12.6
VACC
High-Level Voltage for
/ACC
WP
8.5
9.5
V
Ta
Operating Temperature
−40
85
°C



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