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BAV23CL Datasheet(PDF) 2 Page - ON Semiconductor

Part # BAV23CL
Description  Switching Diode, Dual, High Voltage, Common Cathode
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BAV23CL Datasheet(HTML) 2 Page - ON Semiconductor

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BAV23CL, NSVBAV23CL
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
SINGLE HEATED
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
PD
265
2.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
472
°C/W
Thermal Reference, Junction−to−Anode Lead (Note 1)
R_ψJL
263
°C/W
Thermal Reference, Junction−to−Case (Note 1)
R_ψJC
289
°C/W
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
PD
345
2.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
362
°C/W
Thermal Reference, Junction−to−Anode Lead (Note 2)
R_ψJL
251
°C/W
Thermal Reference, Junction−to−Case (Note 2)
R_ψJC
250
°C/W
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
PD
390
3.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
321
°C/W
Thermal Reference, Junction−to−Anode Lead (Note 1)
R_ψJL
159
°C/W
Thermal Reference, Junction−to−Case (Note 1)
R_ψJC
138
°C/W
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
PD
540
4.3
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
231
°C/W
Thermal Reference, Junction−to−Anode Lead (Note 2)
R_ψJL
148
°C/W
Thermal Reference, Junction−to−Case (Note 2)
R_ψJC
119
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR-4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR-4 @ 500 mm2, 2 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
−
−
0.1
100
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
250
−
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
−
−
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
−
150
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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