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STD65N55 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STD65N55
Description  N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD65N55 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD65N55
4/11
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test condictions
Min. Typ. Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
55
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc = 125°C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
200
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
24
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 32A
8.0
10.5
m
Ω
Table 4.
Dynamic
Symbol
Parameter
Test condictions
Min
Typ.
Max. Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS =25V, ID=32A
50
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25V, f = 1MHz, VGS=0
2200
500
25
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 27V, ID = 65A
VGS =10V
(see Figure 2)
33.5
12.5
9.5
45
nC
nC
nC



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