STF12N50U datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STF12N50U

4/12

Doc ID 17202 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

500

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

500

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

3.75

4.5

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 5 A

0.55

0.8

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward

transconductance

VDS = 15 V, ID = 5 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

1219

159

Co(tr)

Equivalent

capacitance time

VGS = 0, VDS = 0 to 400 V

-65

Co(er)

Equivalent

capacitance energy

-48

Intrinsic gate

resistance

f = 1 MHz open drain

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400 V, ID = 10 A,

VGS = 10 V

(see

Figure 13)

7.5

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