STF18N60M6 datasheet(6/13 Pages) STMICROELECTRONICS

Part #	STF18N60M6

Description	N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 13 page

Figure 7. Capacitance variations

GIPG311020181051CVR

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

CISS

COSS

CRSS

f = 1 MHz

Figure 8. Output capacitance stored energy

GADG311020181207EOS

100 200 300 400 500 600

EOSS

(µJ)

VDS (V)

Figure 9. Normalized gate threshold voltage vs

temperature

GIPG311020181049VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

ID =250 A

TJ (°C)

Figure 10. Normalized on-resistance vs temperature

GIPG311020181049RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

VGS = 10 V

TJ (°C)

Figure 11. Normalized V(BR)DSS vs temperature

GIPG311020181050BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

ID = 1 mA

TJ (°C)

Figure 12. Source-drain diode forward characteristics

GIPG311020181051SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

Tj = -50 °C

Tj = 25 °C

Tj = 150 °C

STF18N60M6

Electrical characteristics (curves)

DS12841 - Rev 1

page 6/13

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