STF3LN80K5

Electrical ratings

DocID027715 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID(1)

Drain current (continuous) at TC = 25 °C

2

A

ID(1)

Drain current (continuous) at TC = 100 °C

1.25

A

ID(2)

Drain current (pulsed)

8

A

PTOT

Total dissipation at TC = 25 °C

20

W

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s; TC = 25 °C)

2500

V

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

50

Tstg

Storage temperature range

- 55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 2 A, di/dt ≤ 100 A/µs; VDSpeak < V(BR)DSS, VDD = 640 V

(4)VDS ≤ 640 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

6.25

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

0.7

A

EAS

Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V)

155

mJ