Electrical characteristics

STF5N65M6

4/13

DocID029232 Rev 1

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS= 0, ID = 1 mA

650

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

1

µA

VGS = 0 V, VDS = 650 V;

TC = 125 °C (1)

100

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.25

3

3.75

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 2 A

1.15

1.3

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

-

170

-

pF

Coss

Output capacitance

-

20

-

pF

Crss

Reverse transfer

capacitance

-

1

-

pF

Coss

eq.

(1)

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0 V

-

35

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID=0 A

-

5

-

Ω

Qg

Total gate charge

VDD = 350 V, ID = 1 A, VGS= 10 V,

(see Figure 15: "Test circuit for

gate charge behavior")

-

5.1

-

nC

Qgs

Gate-source charge

-

0.8

-

nC

Qgd

Gate-drain charge

-

2

-

nC

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 325 V, ID = 2 A, RG

= 4.7 Ω,

VGS = 10 V (see Figure 14: "Test

circuit for resistive load switching

times" and Figure 19: "Switching

time waveform")

-

6.5

-

ns

tr

Rise time

-

5.9

-

ns

td(off)

Turn-off delay time

-

17.4

-

ns

tf

Fall time

-

15.2

-

ns