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K4X51163PC Datasheet(PDF) 9 Page - Samsung semiconductor |
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K4X51163PC Datasheet(HTML) 9 Page - Samsung semiconductor |
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9 / 23 page ![]() K4X51163PC - L(F)E/G February 2006 Mobile-DDR SDRAM Note : 1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option. 2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array. - Full Array - 1/2 Array - 1/4 Array Partial Self Refresh Area Figure.4 EMRS code and TCSR , PASR Partial Array Self Refresh (PASR) BA1=0 BA0=0 BA1=0 BA0=1 BA1=1 BA0=1 BA1=1 BA0=0 BA1=0 BA0=0 BA1=0 BA0=1 BA1=1 BA0=1 BA1=1 BA0=0 BA1=0 BA0=0 BA1=0 BA0=1 BA1=1 BA0=1 BA1=1 BA0=0 Internal Temperature Compensated Self Refresh (TCSR) Note : 1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the self refresh cycle automatically according to the three temperature ranges ; 45 °C and 85 °C. 2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored. 3. It has +/- 5 °C tolerance. Temperature Range Self Refresh Current (IDD6) Unit - E - G Full Array 1/2 Array 1/4 Array Full Array 1/2 Array 1/4 Array 45 °C*3 300 270 255 250 220 205 uA 85 °C 600 500 450 500 400 350 |
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