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K4X51163PC Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K4X51163PC
Description  32M x16 Mobile-DDR SDRAM
PDF  23 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4X51163PC Datasheet(HTML) 9 Page - Samsung semiconductor

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K4X51163PC - L(F)E/G
February 2006
Mobile-DDR SDRAM
Note :
1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option.
2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
- Full Array
- 1/2 Array
- 1/4 Array
Partial Self Refresh Area
Figure.4 EMRS code and TCSR , PASR
Partial Array Self Refresh (PASR)
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
Internal Temperature Compensated Self Refresh (TCSR)
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
self refresh cycle automatically according to the three temperature ranges ; 45
°C and 85 °C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5
°C tolerance.
Temperature Range
Self Refresh Current (IDD6)
Unit
- E
- G
Full Array
1/2 Array
1/4 Array
Full Array
1/2 Array
1/4 Array
45
°C*3
300
270
255
250
220
205
uA
85
°C
600
500
450
500
400
350



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