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STB18N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB18N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 27 page ![]() 1 2 3 TO-247 1 2 3 TAB TO-220 D2PAK I2PAK TAB TAB 1 2 1 3 3 , TAB 1 D ( ) (2 ) G S 3 ( ) AM15572V1 Features Order codes VDS @ TJmax RDS(on) max. ID Package STB18N60M2 650 V 0.280 Ω 13 A D²PAK STI18N60M2 I²PAK STP18N60M2 TO-220 STW18N60M2 TO-247 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Application • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STB18N60M2 STI18N60M2 STP18N60M2 STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet DS9714 - Rev 4 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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