STGP10HF60KD datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STGx10HF60KD

4/13

Doc ID 16136 Rev 2

Electrical characteristics

Tj = 25 °C unless otherwise specified.

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)CES

Collector-emitter breakdown

voltage (VGE= 0)

IC= 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15 V, IC= 5 A

VGE= 15 V, IC= 5 A, Tj = 150 °C

1.6

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

4.5

6.5

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20 V, Tj = 150 °C

±100

ICES

Collector cut-off current

(VGE = 0)

VCE= 600 V

VCE= 600 V, Tj = 150 °C

150

µA

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VCE = 15 V , IC = 5 A

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz, VGE= 0

TBD

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 5 A,

VGE = 15 V

(see Figure 3)

TBD

Obsolete

Product(s)

- Obsolete

Product(s)

STGP10HF60KD Datasheet(PDF) 4 Page - STMicroelectronics

STGP10HF60KD Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL