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STGD3NC120H Datasheet(PDF) 3 Page - STMicroelectronics |
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STGD3NC120H Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STGD3NC120H Electrical ratings Doc ID 023355 Rev 1 3/13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 1200 V IC (1) 1. Calculated according to the iterative formula: Continuous collector current at TC = 25 °C 16 A IC (1) Continuous collector current at TC = 100 °C 9 A ICL (2) 2. Vclamp = 80% VCES, Tj = 150 °C, RG = 10 Ω, VGE = 15 V Turn-off latching current 14 A ICP (3) 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Pulsed collector current 20 A VGE Gate-emitter voltage ± 20 V PTOT Total dissipation at TC = 25 °C 105 W TJ Operating junction temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 1.2 °C/W RthJA Thermal resistance junction-ambient 100 °C/W I C TC () T jmax () TC – R thj c – V CE sat () max () Tjmax () IC TC () , () × ------------------------------------------------------------------------------------------------------- = |
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