DocID024154 Rev 7

9/20

STGW60V60DF, STGWA60V60DF, STGWT60V60DF

Electrical characteristics

Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance

Figure 22. Reverse recovery current vs. diode

current slope

Figure 23. Reverse recovery time vs. diode

current slope

Figure 24. Reverse recovery charge vs. diode

current slope

Figure 25. Reverse recovery energy vs. diode

current slope

AM17157v1

10

100

020

40

60

80

100

t(ns)

Ic (A)

tf

tdoff

VCC = 400V, VGE = 15V,

Tj =175°C, Rg = 4.7 Ω

tr

tdon

AM17159v1

10

100

1000

010

20

30

40

t(ns)

Rg (Ω)

t

f

t

doff

VCC= 400V, VGE = 15V,

Tj =175°C Ic = 60 A

t

r

t

don

AM17158v1

0

10

20

30

40

50

0

500

1000

1500

2000

Irm (A)

di/dt (A/μs)

Vr = 400 V, IF = 60 A

TJ=25°C

175°C

AM17160v1

0

50

100

150

200

0

500

1000

1500

2000

trr (ns)

di/dt (A/μs)

Vr = 400V, IF= 60 A

175 °C

TJ=25°C

AM17161v1

0

500

1000

1500

2000

2500

0

500

1000

1500

2000

Qrr (nC)

di/dt (A/μs)

Vr = 400V, IF = 60 A

175 °C

TJ=25°C

AM17162v1

0

200

400

600

800

1000

1200

1400

0

500

1000 1500 2000 2500 3000

Err

(μJ)

di/dt (A/μs)

V

CC = 400V, VGE = 15V, I

F = 60A

175°C

TJ=25°C