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STGWA50IH65DF Datasheet(PDF) 7 Page - STMicroelectronics |
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STGWA50IH65DF Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 14 page ![]() Figure 13. Gate charge vs gate-emitter voltage IGBT051020171520GCGE 15 12 9 6 3 0 0 40 80 120 160 VGE (V) Qg (nC) VCC = 520 V, IC = 50 A, IG = 1 mA Figure 14. Switching energy vs collector current IGBT051020171522SLC 2 1 0 0 30 60 90 E (mJ) IC (A) VCC =400 V, RG = 22 Ω, VGE = 15 V, Tj = 175 °C Eoff Figure 15. Switching energy vs temperature IGBT051020171526SLT 1.1 1.0 0.9 0.8 0 50 100 150 E (mJ) TJ (°C) VCC = 400 V, IC = 50 A, RG = 22 Ω, VGE = 15 V Eoff Figure 16. Switching energy vs collector-emitter voltage IGBT051020171526SLV 1.4 1.2 1.0 0.8 0.6 150 250 350 450 E (mJ) VCE (V) IC = 50 A, RG = 22 Ω, VGE = 15 V, Tj = 175 °C Eoff Figure 17. Switching times vs collector current IGBT091020171348STC 10 2 10 1 10 0 0 30 60 90 t (ns) IC (A) VCC = 400 V, VGE = 15 V, RG = 22 Ω, Tj = 175 °C tr td(off) tf Figure 18. Switching energy vs snubber capacitance IGBT101020170828SSC 0.6 0.4 0.2 0 0 30 60 90 Csnub (nF) VCC = 320 V, RG = 10 Ω, VGE = 15 V, IC = 50 A, L = 100 μH Eoff (mJ) TJ = 175 °C TJ = 25 °C STGWA50IH65DF Electrical characteristics (curves) DS11796 - Rev 3 page 7/14 |
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