STH200N55F3-2 datasheet(4/11 Pages) STMICROELECTRONICS

Part #	STH200N55F3-2

Description	N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 11 page

Electrical characteristics

STH200N55F3-2

4/11

Doc ID 16085 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating,

VDS = Max rating, Tc = 125 °C

µA

IGSS

Gate body leakage

current (VDS = 0)

VDS = ± 20 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 60 A

1.8

2.6

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS =0

6800

1450

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 44 V, ID = 120 A,

VGS = 10 V

Figure 3

100

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